? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m 200 v v gsm 30 v i d25 t c = 25 c* 86 a i l lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 260 a i as t c = 25 c10a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 150 c, r g = 3.3 p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220, to-3p) 1.13 / 10 nm/ lb.in. f c mounting force (to-263) 10...65/2..5..15 n/lb. weight to-263 2 g to-220 3 g to-3p 5.5 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 1 ma 3.0 5.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 1 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , note 1 29 m trench gate power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density v dss = 200 v i d25 =86 a r ds(on) 29 m ds99664(08/06) ixta 86n20t ixtp 86n20t ixtq 86n20t to-263 (ixta) g s (tab) to-220 (ixtp) d (tab) g s to-3p (ixtq) g d s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta 86n20t ixtp 86n20t ixtq 86n20t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 46 78 s c iss 4500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 550 pf c rss 73 pf t d(on) 22 ns t r v gs = 15 v, v ds = 0.5 v dss , i d = 43 a 24 n s t d(off) r g = 3.3 (external) 52 n s t f 29 ns q g(on) 90 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 30 nc q gd 23 nc r thjc 0.31 c/w r thcs to-220 0.50 c/w to-3p 0.25 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 86 a i sm repetitive 260 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f =25a, -di/dt = 100 a/ s 140 ns v r = 100v, v gs = 0 v note 1: pulse test, t 300 s, duty cycle d 2 %; *: current may be limited by externalterminal currnet limit. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys all rights reserved fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) norm alized to i d = 43a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 86a i d = 43a fig. 5. r ds(on) normalized to i d = 43a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit ixta 86n20t ixtp 86n20t ixtq 86n20t
ixys reserves the right to change limits, test conditions, and dimensions. ixta 86n20t ixtp 86n20t ixtq 86n20t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.544.555.566.57 v gs - volts i d - amperes t j = -40oc 25oc 125oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090 q g - nanocoulombs v gs - volts v ds = 100v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
? 2006 ixys all rights reserved fig. 14. resistive turn-on rise time vs. drain current 9 11 13 15 17 19 21 23 25 27 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 i d - amperes t r - nanoseconds r g = 3.3 v gs = 15v v ds = 100v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 10 12 14 16 18 20 22 24 26 28 30 32 3456789101112131415 r g - ohms t r - nanoseconds 18 19 20 21 22 23 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 86a i d = 43a fig. 16. resistive turn-off switching times vs. junction temperature 14 16 18 20 22 24 26 28 30 32 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 48 50 52 54 56 58 60 62 64 66 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 15v v ds = 100v i d = 43a i d = 86a fig. 17. resistive turn-off switching times vs. drain current 12 14 16 18 20 22 24 26 28 30 32 34 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 i d - amperes t f - nanoseconds 46 48 50 52 54 56 58 60 62 64 66 68 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 15v v ds = 100v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 10 12 14 16 18 20 22 24 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 v gs = 15v v ds = 100v i d = 86a i d = 43a fig. 18. resistive turn-off switching times vs. gate resistance 10 15 20 25 30 35 40 45 50 55 60 65 70 3 4 5 6 7 8 9 101112131415 r g - ohms t f - nanoseconds 50 60 70 80 90 100 110 120 130 140 150 160 170 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 43a, 86a ixta 86n20t ixtp 86n20t ixtq 86n20t ixys ref: t_86n20t (6e) 6-30-06
ixys reserves the right to change limits, test conditions, and dimensions. ixta 86n20t ixtp 86n20t ixtq 86n20t pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline to-3p (ixtq) outline
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